Electrical properties of a TiN/Ti x Al1 – x O y /TiN memristor device manufactured by magnetron sputtering

Abstract

A memristor device with an active layer of mixed metal oxide has been manufactured using reactive magnetron sputtering and electron lithography. The device’s electrical characteristics, such as the switching voltage and resistances in the low-resistance (LRS) and high-resistance (HRS) states, are stable and they a high resistance ratio in these states. The electrical properties of the device, which are similar to those of a living synapse by neural pulse propagation, have been determined. The possibility of the memristor application as a summing element of an artificial neuron is shown. The large value of the high-to-low resistance ratio and minor variation of the electrical characteristics make it possible to use the device in the neuromorphic computing systems.