The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys

Temperature dependence of the energy gap in semiconductors

Y. P. Varshni · Physica · 1967 · 5.3K citations

Natural Sciences, Materials Science, Physics +16

Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Japanese Journal of Applied Physics · 1995 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

Optical band gap of indium nitride

T.L. Tansley, C. P. Foley · Journal of Applied Physics · 1986 · 606 citations

Natural Sciences, Materials Engineering, Materials Science +17

High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Applied Physics Letters · 1995 · 596 citations

Engineering, Electrical Engineering, Materials Science +17

Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers

R. Dingle, D. D. Sell, S. E. Stokowski et al. · Physical review. B, Solid state · 1971 · 526 citations

Engineering, Materials Engineering, Materials Science +17