Metamorphic GaAs HEMTs with f _T of 200 GHz

Abstract

The RF performance of 0.12 µm T-gate GaAs based metamorphic HEMTs with composite In0.53Ga0.47As/In0.30Ga0.70As channel is reported. 2 × 50 µm width devices demonstrated an fT of 200 GHz, the highest of any three terminal GaAs based device reported to date. In addition, 2 × 25 µm devices demonstrated 9.0 dB MAG at 94 GHz showing the W-band capability of GaAs based metamorphic HEMTs.