2016 · 29 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ReliabilityDevice ScalingMemory DevicesNanoelectronicsNanowiresSemiconductor ReliabilityFlash MemoryGate-all-around Transistor ScalingGate-all-around TransistorsHot Carrier GenerationHot Carrier InjectionLong-term Device ReliabilityNanowire Field-effect TransistorsSelf-heating Effects
An on-the-fly self-healing device is experimentally demonstrated for sustainability of space electronics. A high temperature, which is generated by Joule heating in a gate electrode, provides an on-chip annealing of damages induced by ionizing radiation, hot carrier, and tunneling stress. With the self-healing process, a highly scaled silicon nanowire gate-all-around field-effect transistor shows improved long-term reliability in a logic transistor, floating body DRAM, and charge-trap Flash memory, respectively. A thermally isolated gate structure is proposed to enhance the self-healing effect.
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Radiation effects in SOI technologies
J.R. Schwank, V. Ferlet-Cavrois, M.R. Shaneyfelt et al. · IEEE Transactions on Nuclear Science · 2003 · 434 citations
Engineering, Computer Engineering, Electrical Engineering +17