A novel nonvolatile rewritable memory device based on the soluble poly(N-vinylcarbazole)-chemically modified MoS<sub>2</sub> nanosheets (MoS<sub>2</sub>-PVK) was fabricated with the configuration of Au/MoS<sub>2</sub>-PVK/ITO. This is the first example of polymer covalently modified MoS<sub>2</sub> nanosheet-based memory devices. As expected, this device exhibited a typical storage performance of nonvolatile rewritable memory, with a turn-on voltage of -1.54 V and an ON/OFF current ratio of 4 × 10<sup>2</sup>. After annealing at 80 °C for 1 h under a nitrogen atmosphere, a high ON/OFF current ratio (up to 3 × 10<sup>4</sup>) and a lower turn-on voltage (-1.31 V), which are among the best reported for MoS<sub>2</sub>-based polymer/organic memory devices, were achieved due to enhanced crystallization of PVK, which induced a more efficient intramolecular charge transfer effect between PVK and MoS<sub>2</sub> during the annealing process. The effect of film thickness on the current-voltage characteristics of the MoS<sub>2</sub>-PVK-based devices and the memory performance of the MoS<sub>2</sub>/PVK blends-based devices have also been explored.
36
Nanoionics-based resistive switching memories
Rainer Waser, Masakazu Aono · Nature Materials · 2007 · 4.7K citations
Photoluminescence from Chemically Exfoliated MoS<sub>2</sub>
Goki Eda, Hisato Yamaguchi, Damien Voiry et al. · Nano Letters · 2011 · 3.8K citations