Epitaxial Growth and Air‐Stability of Monolayer Antimonene on PdTe₂

Abstract

Monolayer antimonene is fabricated on PdTe₂ by an epitaxial method. Monolayer antimonene is theoretically predicted to have a large bandgap for nanoelectronic devices. Air-exposure experiments indicate amazing chemical stability, which is great for device fabrication. A method to fabricate high-quality monolayer antimonene with several great properties for novel electronic and optoelectronic applications is provided.