Solution growth of silicon carbide using unary chromium solvent

Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Hiroyuki Matsunami, Tsunenobu Kimoto · Materials Science and Engineering R Reports · 1997 · 609 citations

Engineering, Materials Engineering, Materials Science +14

Prospects of the use of liquid phase techniques for the growth of bulk silicon carbide crystals

Dieter Hofmann, Matthias Müller · Materials Science and Engineering B · 1999 · 142 citations

Natural Sciences, Materials Engineering, Materials Science +14

Property measurements at high temperatures

Journal of the Franklin Institute · 1959 · 108 citations

Natural Sciences, Materials Engineering, Materials Science +13

Solution growth of single crystalline 6H, 4H-SiC using Si–Ti–C melt

Kazuhito Kamei, Kazuhiko Kusunoki, Nobuyoshi Yashiro et al. · Journal of Crystal Growth · 2008 · 91 citations

Engineering, Materials Engineering, Materials Science +16

Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique

Kazuhiko Kusunoki, Nobuhiro Okada, Kazuhito Kamei et al. · Journal of Crystal Growth · 2014 · 79 citations

Engineering, Materials Engineering, Materials Science +12