IEEE Journal of Solid-State Circuits · 1998 · 70 citations · 18 references
EngineeringElectrical EngineeringAnalog ElectronicsDigital CommunicationMicroelectronicsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyMixed-signal Integrated Circuit DesignMixed-signal IntegrationModulationRadio-frequency Integrated CircuitsCmos Analog Circuit DesignCmos Analog Integrated CircuitsComplementary Metal-oxide-semiconductor DesignComplementary Metal-oxide-semiconductor DevicesDynamic RangeIntermodulation DistortionRadio Frequency CommunicationRf Cmos Design
A 13-bit, 1.4-MS/s, sixth-order cascaded sigma-delta modulator oversampling at 16 X is implemented in a 0.72 /spl mu/m complementary metal-oxide-semiconductor process for use in the baseband path of a radio-frequency receiver. The modulator achieves 77 dB of dynamic range and dissipates 81 mW from a 3.3 V supply. It is characterized for the blocking and intermodulation requirements of a cordless telephone application.
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