Fast gate drive for SiC-JFET using a conventional driver for MOSFETs and additional protections

Abstract

A new gate drive for SiC-JFET (silicon carbide junction field effect transistor) is developed and tested on a half-bridge. For the realization of a fast gate drive, which offers full protection for the SiC-JFET, a gate drive concept is firstly chosen. The gate drive unit has an output stage made for MOSFETs, a new kind of fast signal isolator, short circuit protection and overvoltage protection.