1c:I[419806,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/1270dead247da766.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/2d7aa753e81324a8.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/263f2cdcb9aa2341.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 1d:T539,We proposed a simple yet robust film treatment method with methanol having only one hydroxyl group to enhance the conductivity of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) by four orders of magnitude. Different methods of film treatment: immersing PEDOT:PSS film in the methanol solution; dropping methanol on the film; and a combination of these are employed and the results are compared. The conductivity of PEDOT:PSS films was enhanced from 0.3 S cm−1 to 1362 S cm−1 after film treatment with methanol. Other alcohols like ethanol and propanol were also used to treat the PEDOT:PSS film and showed inferior conductivity enhancement compared to methanol. The conductivity enhancement was greatly affected by the hydrophilicity and dielectric constant of the alcohols used. The mechanism of conductivity enhancement was investigated through various characterization techniques including FTIR, XPS and AFM. Removal of the insulator PSS from the film, and morphology and conformational changes are the mechanisms for the conductivity enhancement. The treated films also showed high transmittance and low sheet resistance desirable for a standalone electrode. ITO-free polymer solar cells were fabricated using PEDOT:PSS electrodes treated with methanol and showed almost equal performance to ITO electrodes.1e:T518, We have investigated the high-performance oxide thin-film transistor (TFT) with an amorphous indium gallium zinc oxide (a-IGZO) channel and $\hbox{ZrO}_{2}$ gate dielectrics. The a-IGZO TFT is fully fabricated at room temperature without any thermal treatments. $\hbox{ZrO}_{2}$ is one of the most promising high- $k$ materials. The a-IGZO TFT (channel $W/L = \hbox{240/30}\ {\rm\mu}\hbox{m}$) with $\hbox{ZrO}_{2}$ shows high performance such as high on current of 2.11 mA and high field effect mobility of 28 $\hbox{cm}^{2}/(\hbox{V}\cdot\hbox{s})$ at the gate voltage 10 V. The threshold voltage and the subthreshold swing are 3.2 V and 0.56 V/decade, respectively. Note that the high-performance a-IGZO TFT is higher than ever shown in previous researches. 1f:T626,

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