Film‐Depth‐Dependent Light Absorption and Charge Transport for Polymer Electronics: A Case Study on Semiconductor/Insulator Blends by Plasma Etching

Abstract

An easily accessible plasma etching approach is utilized to acquire film-depth-dependent light absorption spectra and 3D charge transport pathways in a polymer field-effect transistor, both with nanometer depth resolution. As an application of this study, depth-dependent optical and electronic properties of semiconductor/insulator blends films are synergically manipulated to increase optical transparency toward higher than 90% with simultaneously improved transistor performance. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.