Printed, Self‐Aligned Side‐Gate Organic Transistors with a Sub‐5 µm Gate–Channel Distance on Imprinted Plastic Substrates

Abstract

Side-gate organic transistors with a sub-5 µm gate–channel distance are demonstrated using a scalable manufacturing strategy. A self-aligned printing process based on imprint lithography and capillarity of liquid inks facilitates substantial reduction of the gate–channel distance and enhancement of the electrical performance of side-gate transistors. This study features a practical platform for manufacturing high-performance organic electronics in a high-throughput manner. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.