Advanced Materials · 2016 · 587 citations · 42 references
EngineeringComputer EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesDevice ModelingDevice SimulationMemory DevicesMemristive MaterialsNanoelectronicsAnalog Switching BehaviorClassification AccuracyLithium-ion Battery MaterialsLow-power Memory CircuitsNeuromorphic DevicesNeuromorphic HardwareNonvolatile Memory MaterialsPhysics-based Simulation
Nonvolatile redox transistors (NVRTs) based upon Li-ion battery materials are demonstrated as memory elements for neuromorphic computer architectures with multi-level analog states, "write" linearity, low-voltage switching, and low power dissipation. Simulations of backpropagation using the device properties reach ideal classification accuracy. Physics-based simulations predict energy costs per "write" operation of <10 aJ when scaled to 200 nm × 200 nm.
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Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart et al. · Nature · 2008 · 11.5K citations
Engineering, Electrical Engineering, Electronic Materials +5
Memristive devices for computing
J. Joshua Yang, Dmitri B. Strukov, Duncan R. Stewart · Nature Nanotechnology · 2012 · 3.8K citations
Engineering, Computer Engineering, Electrical Engineering +11
H.‐S. Philip Wong, Simone Raoux, Sang‐Bum Kim et al. · Proceedings of the IEEE · 2010 · 1.8K citations