InP HEMT amplifier development for G-band (140-220 GHz) applications

Abstract

In this paper we describe a unique InP HEMT MMIC process that has been developed for the demonstration of the first ever G-band (140-220 GHz) amplifiers. This process combines enhanced InP HEMT profiles with a 70 nm T-gate process and a dry via etch process to achieve a high maximum gain of greater than 8 dB at 200 GHz and the highest gain amplifiers ever demonstrated (15 dB at 215 GHz).