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High-k dielectrics and MOSFET characteristics
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2004
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Materials EngineeringElectrical EngineeringDielectricsEngineeringRf SemiconductorSemiconductor DeviceNanoelectronicsGas AnnealApplied PhysicsTime-dependent Dielectric BreakdownChannel MobilityMosfet CharacteristicsSemiconductor Device FabricationGate Dielectric ApplicationsMicroelectronicsElectrical Insulation
High dielectric constant materials have been investigated for gate dielectric applications. In this paper, various techniques (e.g. optimization of interfacial layer, N and Si incorporation and optimized profiles, forming gas anneal) for improving channel mobility, EOT scaling and reliability of high-k devices is discussed.