A 110-GHz AlSb/InAs MMIC amplifier

Abstract

We describe the first demonstration of a W-band amplifier using antimonide based compound semiconductor (ABCS) device technology. The three stage CPW MMIC uses two finger 0.1-/spl mu/m AlSb/InAs HEMT with a total periphery of 40 micron per device. Biased at a total MMIC dissipation of 3.7-m W the amplifier demonstrates 11/spl plusmn/ 1 dB gain over a 80-110 GHz bandwidth. When biased at total MMIC dissipation of 9.0 mW, the amplifier demonstrates 15/spl plusmn/ 1 dB gain over 80-100 GHz bandwidth.