2002 · 75 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor Thin FilmsDopant ActivationEquivalent Oxide ThicknessGate DielectricsGate LeakageGate Oxide LeakageHigh-k DielectricsPolysiliconSubthreshold Swing
MOSFETs and MOSCAPs of a single-layer thin HfO/sub 2/ gate dielectric with dual polysilicon gate were fabricated with self-aligned process and characterized. Polysilicon and dopant activation processes were optimized such that leakage current and equivalent oxide thickness (EOT) of HfO/sub 2/ remain low (EOT of 12.0 /spl Aring/. HfO/sub 2/ with 1/spl times/10/sup -3/ A/cm/sup 2/ at Vg=1.0 V). Reasonable N- and P-MOSFET characteristics such as subthreshold swing of 74 mV/decade and output currents were also demonstrated.
8
Gate engineering for deep-submicron CMOS transistors
Bin Yu, Dong-Hyuk Ju, Wen‐Chin Lee et al. · IEEE Transactions on Electron Devices · 1998 · 78 citations
Engineering, Electrical Engineering, Electronic Materials +16