Uniaxial-biaxial stress hybridization for super-critical strained-si directly on insulator (SC-SSOI) PMOS with different channel orientations.

Abstract

This paper describes the novel stress engineering of SC-SSOI devices through the interactions between biaxial lattice strain, uniaxial relaxation, process-induced stressor and channel orientation. We have demonstrated a method of uniaxial stress relaxation with compressive capping layer (cESL) to achieve the desired stress configurations for enhanced short-channel SC-SSOIpMOS devices