Impact of process scaling on 1/f noise in advanced CMOS technologies

Abstract

The influence of the gate-oxide thickness, the substrate dope, and the gate bias on the input-referred spectral 1/f noise density Sv/sub gate/ has been experimentally investigated. It is shown that the dependence on the oxide thickness and the gate bias can be described by the model of Hung, and that Sv/sub gate/ can be predicted for future technologies. Discrepancies with the ITRS roadmap are discussed.