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Ultra-high di/dt 2500 V MOS assisted gate-triggered thyristors (MAGTs) for high repetition excimer laser system
17
Citations
11
References
2003
Year
Unknown Venue
EngineeringTransient Anode VoltagePower ElectronicsHigh-power LasersSemiconductor DevicePeak AnodeElectronic EngineeringPulse PowerUltra-high Di/dt 2500Gate-triggered ThyristorOptical PumpingPhotonicsElectrical EngineeringPower Semiconductor DeviceGate-triggered ThyristorsMicroelectronicsPower DeviceApplied PhysicsHigh RepetitionOptoelectronics
A novel MOS assisted gate-triggered thyristor (MAGT) having high di/dt turn-on characteristics is proposed. It is shown that 40 kA/cm/sup 2// mu s of di/dt can be attained for a turn-on from 1500-V anode voltage, 9090-A/cm/sup 2/ peak anode current, and 0.7- mu s pulse width, with an extremely low turn-on power loss. The transient anode voltage, caused by high di/dt, is less than 100 V, even in the case of 9090 A/cm/sup 2/ for the anode current density. It is concluded that MAGT is a very promising device to replace thyratrons in a high-repetition excimer laser system.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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