A Low-Power 670-GHz InP HEMT Receiver

Abstract

In this letter, a 670-GHz receiver using 25-nm InP HEMT technology is presented. The receiver obtains the lowest reported noise figure for a transistor-based receiver operating at this frequency (<;10.3 dB), while consuming a total dc power of only 1.8 W. This includes dc power consumption of a ×18 multiplier chain for the local oscillator and linear dc regulators. These results show that InP HEMT technology provides high sensitivity at submillimeter wave frequencies with lowest possible dc power consumption.