2003 · 14 citations · 6 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesThin FilmsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Thin FilmsThin Film Electrical PropertiesCmos Digital Circuit DesignDevice OptimizationHigh-speed Circuit DesignHigh-speed Cmos DesignIntrinsic PropertiesSilicon-on-insulator CmosSilicon-on-insulator TechnologyThin Oxide Films
CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI (silicon-on-insulator) structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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SOI-CMOS 4K SRAM with high dose oxygen implanted substrate
Changxin Chen, T.G.W. Blake, L.R. Hite et al. · 1984 · 13 citations
Engineering, Computer Engineering, Electrical Engineering +17