A new hot carrier simulation method based on full 3D hydrodynamic equations

Abstract

Substrate and gate currents in NMOS transistors are calculated by a newly developed 3-D device simulator based on a hydrodynamic model including momentum and energy conservation. Substrate current characteristics for different device structures such as junction depth and oxide thickness are predicted by a carrier-temperature-dependent impact ionization model to account for nonlocal effects. The merits of the approach are self-consistency and smooth transition to the drift diffusion model in larger devices. Gate injection currents can be successfully simulated by a two-temperature treatment of the hot carrier energy distribution.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>