Japanese Journal of Applied Physics · 2015 · 17 citations · 20 references
EngineeringElectrical EngineeringMaterials ScienceElectrochemistrySemiconductor DevicesSemiconductor MaterialsDefect ModelingDevice CharacterizationElectrochemical Impedance SpectroscopyImpedance SpectroscopySemiconductor DefectsSolar CellsConstant Phase ElementElectrochemical Impedance AnalysisEquivalent Circuit AnalysisEquivalent Circuit ModelingImpedance Data FittingSemiconductor CharacterizationSemiconductor Device CharacterizationSolar Cell Characterization
Abstract We investigate the defect activation energy around the pn interface of Cu(In,Ga)Se 2 (CIGS)-based solar cells using a simple electrochemical impedance spectroscopy. By applying AC and DC voltages to the solar cells, we observed an “inductive” element around the pn interface, which is ignored in conventional deep-level transient spectroscopy or admittance spectroscopy. A defect model is evaluated by proposing an equivalent circuit that includes a positive/negative constant phase element (CPE) to represent the area around the CdS/CIGS interface. By fitting the impedance data, the CPE index and CPE constant show a relationship with the defect activation energy or defect concentration. This result is significant because it may help reveal the defect properties of CIGS solar cells or any other semiconductor devices.
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Influence of the Ga-content on the bulk defect densities of Cu(In,Ga)Se2
G. Hanna, A. Jasenek, Uwe Rau et al. · Thin Solid Films · 2001 · 214 citations
Natural Sciences, Materials Engineering, Materials Science +12