Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates - Concepedia

Concepedia

Publication | Closed Access

Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

46

Citations

93

References

2016

Year

David F. Storm, Matthew T. Hardy, D. S. Katzer, Neeraj Nepal, Brian P. Downey, David J. Meyer, Thomas O. McConkie, Lin Zhou, David J. Smith

Journal of Crystal Growth

Electrical EngineeringCritical IssuesEngineeringApplied PhysicsGan Power DeviceHomoepitaxial Gan GrowthMolecular Beam EpitaxyEpitaxial Growth

References

	Year	Citations

Page 1