Colloidal Synthesis of Uniform‐Sized Molybdenum Disulfide Nanosheets for Wafer‐Scale Flexible Nonvolatile Memory

Abstract

Large-scale colloidal synthesis and integration of uniform-sized molybdenum disulfide (MoS2) nanosheets for a flexible resistive random access memory (RRAM) array are presented. RRAM using MoS2 nanosheets shows a ≈10 000 times higher on/off ratio than that based on exfoliated MoS2. The good uniformity of the MoS2 nanosheets allows wafer-scale system integration of the RRAM array with pressure sensors and quantum-dot light-emitting diodes. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.