Plasma characterization of a plasma doping system for semiconductor device fabrication

Abstract

Summary form only given, as follows. Plasma characterization in a plasma doping system for semiconductor ion implantation is carried out. The target to be implanted is placed directly in the plasma and then biased to a negative potential to accelerate the positive ions into the target. A wafer bias of up to -5 kV with BF/sub 3/ and N/sub 2/ source gases are used to implant boron and nitrogen ions into 200 mm-diameter Silicon wafers. A Hiden ion mass and energy analyzer is used to measure the ion species and energies during the plasma doping. Langmuir and emissive probes are used to determine the doping plasma conditions such as plasma density and electron temperature, which are related to the dose. Preliminary Hiden data show that BF/sup +/ and BF/sub 2//sup +/ are the major ion species for the plasma doping.