Optics Express · 2016 · 88 citations · 21 references
EngineeringMaterials EngineeringMaterials ScienceOptical MaterialsOptoelectronicsSemiconductor MaterialsLight SourcesLight-emitting DiodesLighting MaterialsLuminescent MaterialsSemiconductor Device MaterialsWide-bandgap Semiconductor DevicesExternal Quantum EfficiencyGallium Nitride Light-emitting DiodesGreen Light-emitting DiodesLight-emitting DevicesMetal-organic Chemical Vapor DepositionMetalorganic Chemical Vapor DepositionPower OutputQuantum Efficiency
) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.
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Siddha Pimputkar, James S. Speck, Steven P. DenBaars et al. · Nature Photonics · 2009 · 2.2K citations
Engineering, Electrical Engineering, Materials Engineering +12