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Electrical and structural properties of Au/Yb Schottky contact on p-type GaN as a function of the annealing temperature

Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineeringApplied PhysicsAluminum Gallium NitrideAnnealing TemperatureGan Power DeviceMicroelectronicsP-type GanAu/yb Schottky Contact