Resistive switching in ferroelectric lead-free 0.5Ba (Zr_0.2Ti_0.8)O₃–0.5(Ba_0.7Ca_0.3)TiO₃thin films

Abstract

In this work, resistive switching in pulsed laser deposited ferroelectric lead-free
\n0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 (0.5BZT–0.5BCT) thin films was investigated. This
\nstudy reveals that films grown at 5.5 J cm−2
\n have shown optimal ferroelectric and resistive
\nswitching response, which are attributed to high tetragonality, large grain size and less defect
\nconcentration. Au/0.5BZT–0.5BCT/Pt capacitors show the electroforming free resistive
\nswitching that is explained based on the polarization modulation of the Schottky-like barrier at
\nthe 0.5BZT–0.5BCT/Au interface. The polarization induced resistive switching is evidenced
\nby its disappearance as the temperature increases to the Curie temperature. The capacitor
\nbased on film grown at 5.5 J cm−2
\n shows resistive switching characterized by high switching
\nratio of 106
\n at a low set/reset voltage ≈1V, and by a stable memory window, which are highly
\nrequired for memory applications.