Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors

TLDR

The authors fabricated high‑purity CuInSe₂ powder hydrothermally, ground it to 3–8 µm particles, dispersed 6 wt % into isopropyl alcohol, sprayed 0.1 mL onto Mo/glass substrates, and annealed at 550 °C for 5–30 min in a selenization furnace without added selenium. X‑ray diffraction showed the precursor was predominantly crystalline CuInSe₂ with negligible CuSe, and varying annealing time (5–30 min) significantly influenced densification, crystallization, resistivity, Hall mobility, and carrier concentration of the CIS absorber layers.

Abstract

Abstract In this study, the Mo-electrode thin films were deposited by a two-stepped process, and the high-purity copper indium selenide-based powder (CuInSe 2 , CIS) was fabricated by hydrothermal process by Nanowin Technology Co. Ltd. From the X-ray pattern of the CIS precursor, the mainly crystalline phase was CIS, and the almost undetectable CuSe phase was observed. Because the CIS powder was aggregated into micro-scale particles and the average particle sizes were approximately 3 to 8 μm, the CIS power was ground into nano-scale particles, then the 6 wt.% CIS particles were dispersed into isopropyl alcohol to get the solution for spray coating method. Then, 0.1 ml CIS solution was sprayed on the 20 mm × 10 mm Mo/glass substrates, and the heat treatment for the nano-scale CIS solution under various parameters was carried out in a selenization furnace. The annealing temperature was set at 550°C, and the annealing time was changed from 5 to 30 min, without extra Se content was added in the furnace. The influences of annealing time on the densification, crystallization, resistivity ( ρ ), hall mobility ( μ ), and carrier concentration of the CIS absorber layers were well investigated in this study.