Publication | Closed Access
Large Scale Uniformity of Sputtering Deposited Single- and Few-Layer MoS<sub>2</sub>Investigated by XPS Multipoint Measurements and Histogram Analysis of Optical Contrast
13
Citations
26
References
2016
Year
Materials ScienceIi-vi SemiconductorSurface CharacterizationOptical MaterialsFew-layer Mos2EngineeringPhysicsOptical PropertiesXps Multipoint MeasurementsSurface ScienceApplied PhysicsNatural SciencesOxide ElectronicsOptical TestingChemistryHistogram AnalysisThin Film ProcessingLarge Scale Uniformity
Large scale uniformity of the single- and few-layer MoS2 fabricated by sputtering deposition and subsequential postdeposition sulfurization annealing were investigated by XPS multipoint measurements and histogram analysis of optical contrast, which are non-contact, non-destructive, and quantitative investigation. As a result, it was revealed that the thickness of the 1, 3, and 5L MoS2 were accurately controlled over a sub-cm scale. Moreover, it was confirmed that the results were correlated with the other existing thickness identification methods, such as cross-sectional TEM, AFM, and Raman spectroscopy.
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