Multi-layered MoS₂ film formed by high-temperature sputtering for enhancement-mode nMOSFETs

T. Ohashi, Kohei Suda, Seiya Ishihara, +12

Japanese Journal of Applied Physics

EngineeringThin Film Process TechnologyChemical DepositionSilicon On InsulatorSemiconductor Device +18

Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization

Kentaro Matsuura, T. Ohashi, Iriya Muneta, +5

Journal of Electronic Materials

Materials ScienceEngineeringOxide ElectronicsSurface ScienceApplied Physics +3

Improving crystalline quality of sputtering-deposited MoS₂ thin film by postdeposition sulfurization annealing using (t-C₄H₉)₂S₂

Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto, +8

Japanese Journal of Applied Physics

EngineeringThin Film Process TechnologyChemical DepositionSemiconductor NanostructuresSemiconductors +15

Quantitative relationship between sputter-deposited-MoS₂ properties and underlying-SiO₂ surface roughness

T. Ohashi, Iriya Muneta, Kentaro Matsuura, +7

Applied Physics Express

EngineeringTwo-dimensional MaterialsThin Film Process TechnologyQuantitative RelationshipSubstrate Roughness +15

Properties of single-layer MoS₂ film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C₄H₉)₂S₂

Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto, +8

Japanese Journal of Applied Physics

Materials ScienceMaterials EngineeringEngineeringCrystalline DefectsSulfur Deficiencies +10

Large Scale Uniformity of Sputtering Deposited Single- and Few-Layer MoS₂Investigated by XPS Multipoint Measurements and Histogram Analysis of Optical Contrast

Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto, +6

ECS Journal of Solid State Science and Technology

Materials ScienceIi-vi SemiconductorSurface CharacterizationOptical MaterialsFew-layer Mos2 +13

Sputter-Deposited-MoS₂${n}$ MISFETs With Top-Gate and Al₂O₃Passivation Under Low Thermal Budget for Large Area Integration

Kentaro Matsuura, Hitoshi Wakabayashi, J. Shimizu, +7

IEEE Journal of the Electron Devices Society

SemiconductorsLarge AreaElectrical EngineeringProcess EnduranceEngineering +9

Growth of Ge Homoepitaxial Films by Metal-Organic Chemical Vapor Deposition Using t-C₄H₉GeH₃

Kohei Suda, Takahiro Kijima, Seiya Ishihara, +6

ECS Journal of Solid State Science and Technology

Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringCrystal Growth Technology +11

Ge_1-xSn_x Epitaxial Growth on Ge Substrate by MOCVD

Kohei Suda, Seiya Ishihara, Naomi Sawamoto, +5

ECS Transactions

Materials ScienceMaterials EngineeringChemical EngineeringInorganic MoleculesEngineering +11