Improving crystalline quality of sputtering-deposited MoS₂ thin film by postdeposition sulfurization annealing using (t-C₄H₉)₂S₂

Abstract

Abstract A sputtered MoS 2 thin film is a candidate for realizing enhancement-mode MoS 2 metal–oxide–semiconductor field-effect transistors (MOSFETs). However, there are some sulfur vacancies in the film, which degrade the device performance. In this study, we performed postdeposition sulfurization annealing (PSA) on a sputtered MoS 2 thin film in order to complement sulfur vacancies, and we investigated the fundamental properties of the MoS 2 film. As a result, a high-quality crystalline 10-layer MoS 2 film with an ideal stoichiometric composition was obtained at a relatively low process temperature (500 °C). The MoS 2 film had an indirect bandgap of 1.36 eV and a high Hall mobility compared with the as-deposited sputtered MoS 2 film.