Journal of Physics D Applied Physics · 2016 · 13 citations · 19 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsAluminum OxidesOxide SemiconductorsRefractive IndexSemiconductor Thin FilmsThin Film Optical PropertiesThin-film MaterialsAluminum-doped Zinc OxideBand GapBand Gap EnergyDoping In Thin FilmsSemiconductor Oxide Thin FilmsThin Oxide FilmsThin Oxide LayersThin-film Refractive Index
Al-doped ZnO thin films were grown by rf-sputtering using the oblique angle deposition technique. The films are formed by tilted dense nanocolumns according to the substrate inclination during the growth. The film refractive index changed 16% due to the film nanocolumn tilt from 0° to 13.5°, which corresponded to substrate inclination from 0° to 75°, respectively. Band gap energy was found to diminish, which was associated to local redistribution of Al concentration x in the Al x Zn 1− x O solid solution around the x ≅ 0.02 average.
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IOP Conf. Ser.: Mater. Sci. Eng. 117 012045
Menghuai Wu, Alexander Vakhrushev, Andreas Ludwig et al. · 2016 · 5K citations
Natural Sciences, Materials Engineering, Materials Science +7
Sameer Chhajed, Martin F. Schubert, Jong Kyu Kim et al. · Applied Physics Letters · 2008 · 299 citations · Full text
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Xing Yan, David J. Poxson, Jaehee Cho et al. · Advanced Functional Materials · 2012 · 129 citations
Natural Sciences, Materials Engineering, Materials Science +17