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Influence of annealing in H atmosphere on the electrical properties of Al 2 O 3 layers grown on p -type Si by the atomic layer deposition technique

Materials ScienceMaterials EngineeringElectrical EngineeringAluminium NitrideEngineeringEpitaxial GrowthO 3Surface ScienceApplied PhysicsSemiconductor MaterialP -Type SiMolecular Beam EpitaxyMicroelectronicsAl 2Chemical Vapor Deposition