Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques · 2014 · 15 citations · 2 references
EngineeringMaterials ScienceNuclear EngineeringElectronic MaterialsRadiation DetectionSemiconductor DevicesDetector EfficiencyDetector TechnologyGamma-ray DetectionRadiation DetectorsSemiconductor DetectorsWide Band Gap SemiconductorsBeta Particle DetectorsSemiconductor Radiation DetectorsSilicon DetectorsSilicon Semiconductor DetectorsSolid-state Beta Detectors
The current induced by the radiation from a 63 Ni film of variable thickness is simulated taking into account the real spectrum of emitted electrons and their angular distribution for GaN. The efficiency of β-radiation detectors made from Si and SiC is estimated based on the results obtained in this paper and previously. Using a scanning electron microscope the efficiency of β-radiation detectors made from Si and SiC under conditions corresponding to β radiation from a Ni film with a thickness of 3 μm and activity of 10 mCi/cm 2 is analyzed. It is shown that the efficiency of real Si-based structures is virtually as good as the efficiency of SiC-based structures.
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