Average energy to form electron-hole pairs in GaP diodes with alpha particles

Abstract

The energy required to form an electron-hole pair in gallium phosphide has been measured using GaP p-n junction diodes made from high-purity-level GaP materials. The values of εGaP for several GaP diodes for alpha particles ranged from 6.35 to 6.75 eV, with an average value of 6.54 ± 0.13 eV at 300°K. This value is smaller than that obtained by Goldstein and is very close to the value of 6.56 eV calculated from the experimental relationship ε = 2.596Eg + 0.714 (eV), which was derived previously from the experimental values of ε for Ge, Si, GaAs, and CdTe.