Ion implantation technology in SiC for high-voltage/high-temperature devices

Abstract

Electrical activation of implanted dopants and defect generation in SiC have been investigated. A nearly perfect (> 95%) electrical activation can be obtained including the implant tail region after annealing at 1650-1700 °C. The majority of point defects generated in implanted SiC can remarkably be reduced by thermal oxidation. The high activation ratio of implanted Al acceptors is a key factor for fabricating effective junction termination structures in high-voltage SiC devices. Recent high-quality semi-insulating SiC wafers offer the opportunity of high-temperature SiC integrated devices, which can be fabricated by only ion implantation without an epitaxial growth process.