Molecular beam epitaxy of in1-xGaxASyP1-y(y ≃2.2 ×) lattice matched to InP using gas cells

Electronic Structures of Semiconductor Alloys

J. A. Van Vechten, T. K. Bergstresser · Physical review. B, Solid state · 1970 · 700 citations

Natural Sciences, Materials Science, Physics +15

Band gap versus composition and demonstration of Vegard’s law for In1−<i>x</i>Ga<i>x</i>As<i>y</i>P1−<i>y</i> lattice matched to InP

R. E. Nahory, M. A. Pollack, W. D. Johnston et al. · Applied Physics Letters · 1978 · 415 citations

Natural Sciences, Materials Science, Physics +16

Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P

M. B. Panish · Journal of The Electrochemical Society · 1980 · 223 citations

Engineering, Materials Engineering, Materials Science +11

On the use of AsH3 in the molecular beam epitaxial growth of GaAs

A. R. Calawa · Applied Physics Letters · 1981 · 176 citations

Engineering, Electrical Engineering, Materials Science +14

Gas source molecular beam epitaxy of Ga<i>x</i>In1−<i>x</i>P<i>y</i>As1−<i>y</i>

M. B. Panish, S. Sumski · Journal of Applied Physics · 1984 · 89 citations

Engineering, Materials Engineering, Materials Science +15