Optics Letters · 2016 · 64 citations · 26 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLight SourcesLuminescent MaterialsOptoelectronic DevicesSemiconductor Device MaterialsSemiconductor PhysicsWide-bandgap Semiconductor DevicesBandwidthBlue Light EmissionBlue Light-emitting DiodesGallium Nitride Light-emitting DiodesSuperluminescent Diodes
A high-brightness, droop-free, and speckle-free InGaN/GaN quantum well blue superluminescent diode (SLD) was demonstrated on a semipolar (2021¯) GaN substrate. The 447-nm emitting SLD has a broad spectral linewidth of 6.3 nm at an optical power of 123 mW. A peak optical power of 256 mW was achieved at 700 mA CW injection current. By combining YAG:Ce phosphor, SLD-generated white light shows a color-rendering index (CRI) of 68.9 and a correlated color temperature (CCT) of 4340 K. The measured frequency response of the SLD revealed a -3 dB bandwidth of 560 MHz, thus demonstrating the feasibility of the device for both solid-state lighting (SSL) and visible-light communication (VLC) applications.
26
Siddha Pimputkar, James S. Speck, Steven P. DenBaars et al. · Nature Photonics · 2009 · 2.2K citations
Engineering, Electrical Engineering, Materials Engineering +12
Justin Iveland, Lucio Martinelli, Jacques Peretti et al. · Physical Review Letters · 2013 · 660 citations · Full text