High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications

Chao Shen, Tien Khee Ng, John T. Leonard, Arash Pourhashemi, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Ahmed Y. Alyamani, Munir M. El‐Desouki, Boon S. Ooi

Optics Letters · 2016 · 64 citations · 26 references

Concepts

Abstract

A high-brightness, droop-free, and speckle-free InGaN/GaN quantum well blue superluminescent diode (SLD) was demonstrated on a semipolar (2021¯) GaN substrate. The 447-nm emitting SLD has a broad spectral linewidth of 6.3 nm at an optical power of 123 mW. A peak optical power of 256 mW was achieved at 700 mA CW injection current. By combining YAG:Ce phosphor, SLD-generated white light shows a color-rendering index (CRI) of 68.9 and a correlated color temperature (CCT) of 4340 K. The measured frequency response of the SLD revealed a -3 dB bandwidth of 560 MHz, thus demonstrating the feasibility of the device for both solid-state lighting (SSL) and visible-light communication (VLC) applications.

References

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