Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

TLDR

Silicon‑Carbide (SiC) device technology has attracted interest due to its superior thermal performance, higher power ratings, and higher switching frequencies compared with Silicon, enabling high‑powered switching applications in extreme environments. A novel hard‑switched power processing unit (PPU) is implemented utilizing SiC power devices. Accelerated life data is captured and assessed with a damage‑accumulation model of gate‑oxide and drain‑source junction lifetime to evaluate potential system performance at high‑temperature environments.

Abstract

Abstract Silicon-Carbide (SiC) device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon (Si) counterpart, SiC offers a greater possibility for high powered switching applications in extreme environment. In particular, SiC Metal-Oxide-Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing SiC power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.