Performance enhancement of AlGaN deep-ultraviolet light-emitting diodes with varied superlattice barrier electron blocking layer

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

Max Shatalov, Wenhong Sun, A. V. Lunev et al. · Applied Physics Express · 2012 · 465 citations · Full text

Photonics, Electrical Engineering, Solid-state Lighting +14

222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphire

Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi et al. · physica status solidi (a) · 2009 · 419 citations

Aluminium Nitride, Engineering, Optoelectronic Devices +18

Thermally stable luminescence of KSrPO4:Eu2+ phosphor for white light UV light-emitting diodes

Yu-Sheng Tang, Shu‐Fen Hu, Chun Che Lin et al. · Applied Physics Letters · 2007 · 323 citations

Engineering, Luminescent Glass, Stable Luminescence +16

Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes

Ronald A. Arif, Yik‐Khoon Ee, Nelson Tansu · Applied Physics Letters · 2007 · 289 citations · Full text

Radiative Efficiency Enhancement, Photonics, Electrical Engineering +15

Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

Cyril Pernot, Myung‐Hee Y. Kim, Shinya Fukahori et al. · Applied Physics Express · 2010 · 257 citations

Al Composition, Photonics, Electrical Engineering +12