Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior

Abstract

Amorphous oxide semiconductors like In-Ga-Zn-O (a-IGZO) have attracted much attention, but shifting threshold voltage and other problems are obstacles to successful applications. The authors' calculations indicate that interstitial oxygen defects in a-IGZO are responsible for the observed instability under positive bias stress. This insight helps clear the way for devices such as transparent, flexible thin-film transistors.