Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method

Abstract

To effectively reduce basal plane dislocations (BPDs) during SiC physical vapor transport growth, a three-dimensional model for tracking the multiplication of BPDs has been developed. The distribution of BPDs inside global crystals has been shown. The effects of the convexity of the growth surface and the cooling rate have been analyzed. The results show that the convexity of the growth surface is unfavorable and can cause a large multiplication of BPDs when the crystal grows. Fast cooling during the cooling process is beneficial for the reduction of BPDs because fast cooling can result in a smaller radial flux at the high-temperature region. In addition, fast cooling can reduce the generation of stacking faults during the cooling process. Therefore, to reduce BPDs and stacking faults, it is better to maintain or reduce the convexity of the growth surface and increase the cooling rate during the cooling process.