Physical Review B · 2014 · 11 citations · 37 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsQuantum MechanicsSemiconductor MaterialsMagnetic Properties Of SolidsMagnetism In SolidsQuantum TunnelingQuantum WellsSemiconductor HeterostructuresSemiconductor PhysicsCollapse MechanismsMagnetoresistancePhotoluminescencePhotoluminescence In Quantum WellsPhotoluminescence SpectroscopyQuantum Well HeterostructuresSpectroscopic CharacterizationTunneling In Semiconductors
Magnetophotoluminescence and magnetotransport were studied in a GaAs/AlGaAs triple quantum well. Oscillations of the photoluminescence intensity observed in tilted magnetic fields were found to correspond to the interlayer tunneling quantum Hall gap collapses detected in magnetoresistance measurements and predicted to occur in tilted magnetic fields. The obtained experimental data were shown to agree well with the theory developed for double quantum wells. This implies that the observed quantum Hall gap collapses are mostly caused by the tunneling between a pair of quantum wells. Our results reveal spectroscopic evidence of the quantum Hall gap collapses. Indications of interlayer correlation effects influencing a character of the inter-Landau-level gaps were found.
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Photoluminescence of Al<i>x</i>Ga1−<i>x</i>As alloys
Lorenzo Pavesi, M. Guzzi · Journal of Applied Physics · 1994 · 495 citations