Optimization of Lateral Superjunction Based on the Minimum Specific ON-Resistance

Abstract

The optimization methodology of the minimum specific ON-resistance R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON,min</sub> for the lateral superjunction device is proposed based on the concepts of charge and potential electric fields in this paper. From the R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON,min</sub> method, a new relationship between R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> and breakdown voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">B</sub> is developed, and the analytical formulas are obtained to directly give the doping concentration N and the drift length L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> . The calculated results, including the 800 and 1600 V examples, are in good agreement with the simulations. The optimized designs are also compared with the existing experimental and simulated data. It is shown that R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> from the proposed optimization method is minimum, and the methodology of R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON,min</sub> is universal.