Graphene Coupled with Silicon Quantum Dots for High‐Performance Bulk‐Silicon‐Based Schottky‐Junction Photodetectors

Abstract

Graphene is coupled with silicon quantum dots (Si QDs) on top of bulk Si to form a hybrid photodetector. Si QDs cause an increase of the built-in potential of the graphene/Si Schottky junction while reducing the optical reflection of the photodetector. Both the electrical and optical contributions of Si QDs enable a superior performance of the photodetector.