Crystal Growth & Design · 2014 · 10 citations · 28 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsNanoelectronicsQuantum DotsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor NanomaterialsSemiconductor PhysicsCore NucleationGrowth Parameters EstimationNanoparticle NucleationQuantum Dot MaterialsQuantum Dot SynthesisSemiconductor Quantum DotsStackingSubstrate Temperature Effects
This work studies the selective nucleation of InAs within nanoholes on GaAs(001) substrates patterned by atomic force microscopy local oxidation. The effects of substrate temperature and As 4 overpressure during InAs deposition directly on the patterned substrate (without a GaAs buffer layer) are considered. It is found that when InAs is deposited at substrate temperature of 510 °C under low As 4 overpressure, a single InAs quantum dot per nanohole is obtained for a broad range of sizes of pattern motifs. The use of these InAs quantum dots as seed nuclei for vertical stacking of optically active single InAs site-controlled quantum dots is investigated.
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Jeremy L. O’Brien, Akira Furusawa, Jelena Vučković · Nature Photonics · 2009 · 2.3K citations · Full text