Effect of buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)

Timo Schumann, M. Dubslaff, M. H. Oliveira, Michael Hanke, J. M. J. Lopes, H. Riechert

Physical Review B · 2014 · 51 citations · 36 references

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Abstract

The authors employ synchrotron-based grazing incidence diffraction to measure the in-plane lattice parameter of single atomic layers in different high-quality epitaxial graphene/SiC(0001) samples. Their results provide useful information on the role of a buffer layer in graphene growth on SiC.

References

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